SiC N-Channel SiC Power Module, 16 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT20N120AG

RS Stock No.: 202-4778Brand: STMicroelectronicsManufacturers Part No.: SCT20N120AG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.52 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

25V

Number of Elements per Chip

1

Transistor Material

SiC

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EGP 41,638.14

EGP 41,638.14 1 Tube of 30 (ex VAT)

SiC N-Channel SiC Power Module, 16 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT20N120AG

1

Available in multiples of 1
1EGP 41,638.14
2EGP 83,276.28
3EGP 124,914.42
4EGP 166,552.56
5EGP 208,190.70
6EGP 249,828.84
7EGP 291,466.98
8EGP 333,105.12
9EGP 374,743.26
10EGP 416,381.40
11EGP 458,019.54
12EGP 499,657.68
13EGP 541,295.82
14EGP 582,933.96
15EGP 624,572.10

EGP 41,638.14

EGP 41,638.14 1 Tube of 30 (ex VAT)

SiC N-Channel SiC Power Module, 16 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT20N120AG
Stock information temporarily unavailable.

1

Available in multiples of 1
1EGP 41,638.14
2EGP 83,276.28
3EGP 124,914.42
4EGP 166,552.56
5EGP 208,190.70
6EGP 249,828.84
7EGP 291,466.98
8EGP 333,105.12
9EGP 374,743.26
10EGP 416,381.40
11EGP 458,019.54
12EGP 499,657.68
13EGP 541,295.82
14EGP 582,933.96
15EGP 624,572.10

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.52 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

25V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more