STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 7-Pin H2PAK-7 SCT027H65G3AG

RS Stock No.: 214-954Brand: STMicroelectronicsManufacturers Part No.: SCT027H65G3AG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

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Stock information temporarily unavailable.

EGP 134,507,660.00

EGP 134,507.66 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 7-Pin H2PAK-7 SCT027H65G3AG

1000

Available in multiples of 1000
1000EGP 134,507,660.00
2000EGP 269,015,320.00
3000EGP 403,522,980.00
4000EGP 538,030,640.00
5000EGP 672,538,300.00
6000EGP 807,045,960.00
7000EGP 941,553,620.00
8000EGP 1,076,061,280.00
9000EGP 1,210,568,940.00
10000EGP 1,345,076,600.00
11000EGP 1,479,584,260.00
12000EGP 1,614,091,920.00
13000EGP 1,748,599,580.00
14000EGP 1,883,107,240.00
15000EGP 2,017,614,900.00

EGP 134,507,660.00

EGP 134,507.66 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 7-Pin H2PAK-7 SCT027H65G3AG
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000EGP 134,507,660.00
2000EGP 269,015,320.00
3000EGP 403,522,980.00
4000EGP 538,030,640.00
5000EGP 672,538,300.00
6000EGP 807,045,960.00
7000EGP 941,553,620.00
8000EGP 1,076,061,280.00
9000EGP 1,210,568,940.00
10000EGP 1,345,076,600.00
11000EGP 1,479,584,260.00
12000EGP 1,614,091,920.00
13000EGP 1,748,599,580.00
14000EGP 1,883,107,240.00
15000EGP 2,017,614,900.00

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more