STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

RS Stock No.: 719-470Brand: STMicroelectronicsManufacturers Part No.: SCT025W120G3-4
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247-4

Series

SCT

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

388W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

2.7V

Maximum Operating Temperature

175°C

Width

5.1 mm

Length

15.9mm

Height

25.27mm

Country of Origin

China

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Stock information temporarily unavailable.

EGP 1,355.00

EGP 1,355.00 Each (ex VAT)

STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

1

Available in multiples of 1
1EGP 1,355.00
2EGP 2,710.00
3EGP 4,065.00
4EGP 5,420.00
5EGP 6,775.00
6EGP 8,130.00
7EGP 9,485.00
8EGP 10,840.00
9EGP 12,195.00
10EGP 13,550.00
11EGP 14,905.00
12EGP 16,260.00
13EGP 17,615.00
14EGP 18,970.00
15EGP 20,325.00

EGP 1,355.00

EGP 1,355.00 Each (ex VAT)

STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

Stock information temporarily unavailable.

1

Available in multiples of 1
1EGP 1,355.00
2EGP 2,710.00
3EGP 4,065.00
4EGP 5,420.00
5EGP 6,775.00
6EGP 8,130.00
7EGP 9,485.00
8EGP 10,840.00
9EGP 12,195.00
10EGP 13,550.00
11EGP 14,905.00
12EGP 16,260.00
13EGP 17,615.00
14EGP 18,970.00
15EGP 20,325.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247-4

Series

SCT

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

388W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

2.7V

Maximum Operating Temperature

175°C

Width

5.1 mm

Length

15.9mm

Height

25.27mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more