Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
129 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
EGP 136,925.70
EGP 4,564.19 Each (In a Tube of 30) (ex VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 129 A, 1200 V, 4-Pin HiP247-4 SCT015W120G3-4AG
30
EGP 136,925.70
EGP 4,564.19 Each (In a Tube of 30) (ex VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 129 A, 1200 V, 4-Pin HiP247-4 SCT015W120G3-4AG
Stock information temporarily unavailable.
30
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
129 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC


