Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
900 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
China
EGP 5,213.77
EGP 5,213.77 Each (ex VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 4-Pin HiP247-4 SCT012W90G3-4AG
1
EGP 5,213.77
EGP 5,213.77 Each (ex VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 4-Pin HiP247-4 SCT012W90G3-4AG
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
900 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
China


