STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

RS Stock No.: 215-220Brand: STMicroelectronicsManufacturers Part No.: SCT012H90G3AG
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

138nC

Forward Voltage Vf

2.8V

Maximum Operating Temperature

175°C

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

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Stock information temporarily unavailable.

EGP 5,572.58

EGP 5,572.58 Each (ex VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 5,572.58
2EGP 11,145.16
3EGP 16,717.74
4EGP 22,290.32
5EGP 27,862.90
6EGP 33,435.48
7EGP 39,008.06
8EGP 44,580.64
9EGP 50,153.22
10EGP 55,725.80
11EGP 61,298.38
12EGP 66,870.96
13EGP 72,443.54
14EGP 78,016.12
15EGP 83,588.70

EGP 5,572.58

EGP 5,572.58 Each (ex VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 5,572.58
2EGP 11,145.16
3EGP 16,717.74
4EGP 22,290.32
5EGP 27,862.90
6EGP 33,435.48
7EGP 39,008.06
8EGP 44,580.64
9EGP 50,153.22
10EGP 55,725.80
11EGP 61,298.38
12EGP 66,870.96
13EGP 72,443.54
14EGP 78,016.12
15EGP 83,588.70

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

138nC

Forward Voltage Vf

2.8V

Maximum Operating Temperature

175°C

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more