STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 7-Pin H2PAK-7 SCT012H90G3AG

RS Stock No.: 215-219Brand: STMicroelectronicsManufacturers Part No.: SCT012H90G3AG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

900 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

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Stock information temporarily unavailable.

EGP 137,060,410.00

EGP 137,060.41 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 7-Pin H2PAK-7 SCT012H90G3AG

1000

Available in multiples of 1000
1000EGP 137,060,410.00
2000EGP 274,120,820.00
3000EGP 411,181,230.00
4000EGP 548,241,640.00
5000EGP 685,302,050.00
6000EGP 822,362,460.00
7000EGP 959,422,870.00
8000EGP 1,096,483,280.00
9000EGP 1,233,543,690.00
10000EGP 1,370,604,100.00
11000EGP 1,507,664,510.00
12000EGP 1,644,724,920.00
13000EGP 1,781,785,330.00
14000EGP 1,918,845,740.00
15000EGP 2,055,906,150.00

EGP 137,060,410.00

EGP 137,060.41 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 7-Pin H2PAK-7 SCT012H90G3AG
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000EGP 137,060,410.00
2000EGP 274,120,820.00
3000EGP 411,181,230.00
4000EGP 548,241,640.00
5000EGP 685,302,050.00
6000EGP 822,362,460.00
7000EGP 959,422,870.00
8000EGP 1,096,483,280.00
9000EGP 1,233,543,690.00
10000EGP 1,370,604,100.00
11000EGP 1,507,664,510.00
12000EGP 1,644,724,920.00
13000EGP 1,781,785,330.00
14000EGP 1,918,845,740.00
15000EGP 2,055,906,150.00

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

900 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more