Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
Stock information temporarily unavailable.
EGP 24,555.09
EGP 24,555.09 Each (ex VAT)
Semikron SKM150GB12F4G Half Bridge IGBT Transistor Module, 150 A 1200 V
Select packaging type
Standard
1
EGP 24,555.09
EGP 24,555.09 Each (ex VAT)
Semikron SKM150GB12F4G Half Bridge IGBT Transistor Module, 150 A 1200 V
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge