ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX

RS Stock No.: 177-6458Brand: ROHMManufacturers Part No.: R6520ENX
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Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

R6520ENX

Package Type

TO-220FM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.8mm

Length

10.3mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

15.4mm

Country of Origin

Japan

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Stock information temporarily unavailable.

EGP 702.22

EGP 351.11 Each (In a Pack of 2) (ex VAT)

ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX

2

Available in multiples of 2
2EGP 702.22
4EGP 1,404.44
6EGP 2,106.66
8EGP 2,808.88
10EGP 3,511.10
12EGP 4,213.32
14EGP 4,915.54
16EGP 5,617.76
18EGP 6,319.98
20EGP 7,022.20
22EGP 7,724.42
24EGP 8,426.64
26EGP 9,128.86
28EGP 9,831.08
30EGP 10,533.30

EGP 702.22

EGP 351.11 Each (In a Pack of 2) (ex VAT)

ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX
Stock information temporarily unavailable.

2

Available in multiples of 2
2EGP 702.22
4EGP 1,404.44
6EGP 2,106.66
8EGP 2,808.88
10EGP 3,511.10
12EGP 4,213.32
14EGP 4,915.54
16EGP 5,617.76
18EGP 6,319.98
20EGP 7,022.20
22EGP 7,724.42
24EGP 8,426.64
26EGP 9,128.86
28EGP 9,831.08
30EGP 10,533.30

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

R6520ENX

Package Type

TO-220FM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.8mm

Length

10.3mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

15.4mm

Country of Origin

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more