Technical Document
Specifications
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
1500 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.6 x 1.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.
Bipolar Transistors, ROHM Semiconductor
P.O.A.
Each (In a Pack of 25) (ex VAT)
25
P.O.A.
Each (In a Pack of 25) (ex VAT)
25
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Technical Document
Specifications
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
1500 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.6 x 1.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.