OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8
Technical Document
Specifications
Brand
OSI OptoelectronicsSpectrums Detected
Infrared
Wavelength of Peak Sensitivity
436nm
Package Type
TO-8
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
3
Diode Material
Si
Minimum Wavelength Detected
350nm
Maximum Wavelength Detected
1100nm
Height
0.17in
Diameter
13.97mm
Peak Photo Sensitivity
0.21A/W
Series
OSD
Polarity
Reverse
Typical Rise Time
30µs
Country of Origin
Malaysia
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EGP 14,581.02
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EGP 14,581.02
Each (ex VAT)
1
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Technical Document
Specifications
Brand
OSI OptoelectronicsSpectrums Detected
Infrared
Wavelength of Peak Sensitivity
436nm
Package Type
TO-8
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
3
Diode Material
Si
Minimum Wavelength Detected
350nm
Maximum Wavelength Detected
1100nm
Height
0.17in
Diameter
13.97mm
Peak Photo Sensitivity
0.21A/W
Series
OSD
Polarity
Reverse
Typical Rise Time
30µs
Country of Origin
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products