onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1

RS Stock No.: 189-0419Brand: onsemiManufacturers Part No.: NVHL080N120SC1
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

162 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

348 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +25 V

Width

4.82mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

56 nC @ 20 V

Maximum Operating Temperature

+175 °C

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4V

Automotive Standard

AEC-Q101

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EGP 1,237.18

EGP 1,237.18 Each (ex VAT)

onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 1,237.18
2EGP 2,474.36
3EGP 3,711.54
4EGP 4,948.72
5EGP 6,185.90
6EGP 7,423.08
7EGP 8,660.26
8EGP 9,897.44
9EGP 11,134.62
10EGP 12,371.80
11EGP 13,608.98
12EGP 14,846.16
13EGP 16,083.34
14EGP 17,320.52
15EGP 18,557.70

EGP 1,237.18

EGP 1,237.18 Each (ex VAT)

onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 1,237.18
2EGP 2,474.36
3EGP 3,711.54
4EGP 4,948.72
5EGP 6,185.90
6EGP 7,423.08
7EGP 8,660.26
8EGP 9,897.44
9EGP 11,134.62
10EGP 12,371.80
11EGP 13,608.98
12EGP 14,846.16
13EGP 16,083.34
14EGP 17,320.52
15EGP 18,557.70

Stock information temporarily unavailable.

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Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

162 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

348 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +25 V

Width

4.82mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

56 nC @ 20 V

Maximum Operating Temperature

+175 °C

Height

20.82mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4V

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more