Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
30 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
EGP 86.00
EGP 8.60 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
10
EGP 86.00
EGP 8.60 Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
30 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details


