onsemi SiC Power SiC N-Channel MOSFET, 142 A, 650 V, 4-Pin TO-247-4 NTH4L015N065SC1

RS Stock No.: 229-6458Brand: onsemiManufacturers Part No.: NTH4L015N065SC1
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

142 A

Maximum Drain Source Voltage

650 V

Series

SiC Power

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.012 Ω

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

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EGP 2,369.36

EGP 2,369.36 Each (ex VAT)

onsemi SiC Power SiC N-Channel MOSFET, 142 A, 650 V, 4-Pin TO-247-4 NTH4L015N065SC1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 2,369.36
2EGP 4,738.72
3EGP 7,108.08
4EGP 9,477.44
5EGP 11,846.80
6EGP 14,216.16
7EGP 16,585.52
8EGP 18,954.88
9EGP 21,324.24
10EGP 23,693.60
11EGP 26,062.96
12EGP 28,432.32
13EGP 30,801.68
14EGP 33,171.04
15EGP 35,540.40

EGP 2,369.36

EGP 2,369.36 Each (ex VAT)

onsemi SiC Power SiC N-Channel MOSFET, 142 A, 650 V, 4-Pin TO-247-4 NTH4L015N065SC1

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 2,369.36
2EGP 4,738.72
3EGP 7,108.08
4EGP 9,477.44
5EGP 11,846.80
6EGP 14,216.16
7EGP 16,585.52
8EGP 18,954.88
9EGP 21,324.24
10EGP 23,693.60
11EGP 26,062.96
12EGP 28,432.32
13EGP 30,801.68
14EGP 33,171.04
15EGP 35,540.40

Stock information temporarily unavailable.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

142 A

Maximum Drain Source Voltage

650 V

Series

SiC Power

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.012 Ω

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more