Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Maximum Power Dissipation
20 W
Dimensions
6.73 x 2.38 x 6.35mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
6.73mm
Height
6.35mm
Width
2.38mm
Product details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
Production pack (Tube)
15
P.O.A.
Production pack (Tube)
15
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Maximum Power Dissipation
20 W
Dimensions
6.73 x 2.38 x 6.35mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
6.73mm
Height
6.35mm
Width
2.38mm
Product details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.