Nexperia PBSS4140U,115 NPN Transistor, 1 A, 40 V, 3-Pin UMT

RS Stock No.: 518-1514PBrand: NexperiaManufacturers Part No.: PBSS4140U,115
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Technical Document

Specifications

Country of Origin

Malaysia

Product details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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EGP 18.50

EGP 0.74 Each (Supplied on a Reel) (ex VAT)

Nexperia PBSS4140U,115 NPN Transistor, 1 A, 40 V, 3-Pin UMT

25

Available in multiples of 25
25EGP 18.50
50EGP 37.00
75EGP 55.50
100EGP 74.00
125EGP 92.50
150EGP 111.00
175EGP 129.50
200EGP 148.00
225EGP 166.50
250EGP 185.00
275EGP 203.50
300EGP 222.00
325EGP 240.50
350EGP 259.00
375EGP 277.50

EGP 18.50

EGP 0.74 Each (Supplied on a Reel) (ex VAT)

Nexperia PBSS4140U,115 NPN Transistor, 1 A, 40 V, 3-Pin UMT

Stock information temporarily unavailable.

25

Available in multiples of 25
25EGP 18.50
50EGP 37.00
75EGP 55.50
100EGP 74.00
125EGP 92.50
150EGP 111.00
175EGP 129.50
200EGP 148.00
225EGP 166.50
250EGP 185.00
275EGP 203.50
300EGP 222.00
325EGP 240.50
350EGP 259.00
375EGP 277.50

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Country of Origin

Malaysia

Product details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more