Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
375 mA
Maximum Drain Source Voltage
240 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Length
6.7mm
Maximum Operating Temperature
+150 °C
Height
1.7mm
Country of Origin
China
Product details
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
10
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
375 mA
Maximum Drain Source Voltage
240 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Length
6.7mm
Maximum Operating Temperature
+150 °C
Height
1.7mm
Country of Origin
China
Product details


