Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
2.39mm
Minimum Operating Temperature
-55 °C
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EGP 60.29
Each (In a Tube of 75) (ex VAT)
75
EGP 60.29
Each (In a Tube of 75) (ex VAT)
75
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
2.39mm
Minimum Operating Temperature
-55 °C