Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRLPBF

RS Stock No.: 220-7496Brand: InfineonManufacturers Part No.: IRFR3709ZTRLPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0065 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

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EGP 887.40

EGP 44.37 Each (In a Pack of 20) (ex VAT)

Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRLPBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20EGP 887.40
40EGP 1,774.80
60EGP 2,662.20
80EGP 3,549.60
100EGP 4,437.00
120EGP 5,324.40
140EGP 6,211.80
160EGP 7,099.20
180EGP 7,986.60
200EGP 8,874.00
220EGP 9,761.40
240EGP 10,648.80
260EGP 11,536.20
280EGP 12,423.60
300EGP 13,311.00

EGP 887.40

EGP 44.37 Each (In a Pack of 20) (ex VAT)

Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRLPBF

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20EGP 887.40
40EGP 1,774.80
60EGP 2,662.20
80EGP 3,549.60
100EGP 4,437.00
120EGP 5,324.40
140EGP 6,211.80
160EGP 7,099.20
180EGP 7,986.60
200EGP 8,874.00
220EGP 9,761.40
240EGP 10,648.80
260EGP 11,536.20
280EGP 12,423.60
300EGP 13,311.00

Stock information temporarily unavailable.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
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Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0065 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more