Infineon N-Channel MOSFET, 5.8 A, 25 V, 3-Pin SOT-23 IRFML8244TRPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
25 V
Series
HEXFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
5.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
Philippines
Product details
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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EGP 20,070.00
EGP 6.69 Each (On a Reel of 3000) (ex VAT)
3000
EGP 20,070.00
EGP 6.69 Each (On a Reel of 3000) (ex VAT)
3000
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
25 V
Series
HEXFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
5.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
Philippines
Product details
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products