N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC Infineon IRF7749L1TRPBF

RS Stock No.: 165-8086Brand: InfineonManufacturers Part No.: IRF7749L1TRPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

375 A

Maximum Drain Source Voltage

60 V

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

1.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

7.1mm

Number of Elements per Chip

1

Transistor Material

Si

Length

9.15mm

Typical Gate Charge @ Vgs

200 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

0.49mm

Series

DirectFET, HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

Mexico

Product details

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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EGP 265.23

Each (On a Reel of 4000) (ex VAT)

N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC Infineon IRF7749L1TRPBF

4000

Available in multiples of 4000
4000EGP 1,060,920.00
8000EGP 2,121,840.00
12000EGP 3,182,760.00
16000EGP 4,243,680.00
20000EGP 5,304,600.00
24000EGP 6,365,520.00
28000EGP 7,426,440.00
32000EGP 8,487,360.00
36000EGP 9,548,280.00
40000EGP 10,609,200.00
44000EGP 11,670,120.00
48000EGP 12,731,040.00
52000EGP 13,791,960.00
56000EGP 14,852,880.00
60000EGP 15,913,800.00

EGP 265.23

Each (On a Reel of 4000) (ex VAT)

N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC Infineon IRF7749L1TRPBF
Stock information temporarily unavailable.

4000

Available in multiples of 4000
4000EGP 1,060,920.00
8000EGP 2,121,840.00
12000EGP 3,182,760.00
16000EGP 4,243,680.00
20000EGP 5,304,600.00
24000EGP 6,365,520.00
28000EGP 7,426,440.00
32000EGP 8,487,360.00
36000EGP 9,548,280.00
40000EGP 10,609,200.00
44000EGP 11,670,120.00
48000EGP 12,731,040.00
52000EGP 13,791,960.00
56000EGP 14,852,880.00
60000EGP 15,913,800.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

375 A

Maximum Drain Source Voltage

60 V

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

1.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

7.1mm

Number of Elements per Chip

1

Transistor Material

Si

Length

9.15mm

Typical Gate Charge @ Vgs

200 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

0.49mm

Series

DirectFET, HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

Mexico

Product details

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more