Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO-220 IPP65R110CFDAAKSA1

RS Stock No.: 222-4707Brand: InfineonManufacturers Part No.: IPP65R110CFDAAKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31.2 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

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EGP 1,258.92

EGP 629.46 Each (In a Pack of 2) (ex VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO-220 IPP65R110CFDAAKSA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2EGP 1,258.92
4EGP 2,517.84
6EGP 3,776.76
8EGP 5,035.68
10EGP 6,294.60
12EGP 7,553.52
14EGP 8,812.44
16EGP 10,071.36
18EGP 11,330.28
20EGP 12,589.20
22EGP 13,848.12
24EGP 15,107.04
26EGP 16,365.96
28EGP 17,624.88
30EGP 18,883.80

EGP 1,258.92

EGP 629.46 Each (In a Pack of 2) (ex VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO-220 IPP65R110CFDAAKSA1

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2EGP 1,258.92
4EGP 2,517.84
6EGP 3,776.76
8EGP 5,035.68
10EGP 6,294.60
12EGP 7,553.52
14EGP 8,812.44
16EGP 10,071.36
18EGP 11,330.28
20EGP 12,589.20
22EGP 13,848.12
24EGP 15,107.04
26EGP 16,365.96
28EGP 17,624.88
30EGP 18,883.80

Stock information temporarily unavailable.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31.2 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more