Infineon OptiMOS™ N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 IPP057N06N3GXKSA1

RS Stock No.: 215-2536Brand: InfineonManufacturers Part No.: IPP057N06N3GXKSA1Distrelec Article No.: 30341231
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0057 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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EGP 5,694.00

EGP 113.88 Each (In a Tube of 50) (ex VAT)

Infineon OptiMOS™ N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 IPP057N06N3GXKSA1

50

Available in multiples of 50
50EGP 5,694.00
100EGP 11,388.00
150EGP 17,082.00
200EGP 22,776.00
250EGP 28,470.00
300EGP 34,164.00
350EGP 39,858.00
400EGP 45,552.00
450EGP 51,246.00
500EGP 56,940.00
550EGP 62,634.00
600EGP 68,328.00
650EGP 74,022.00
700EGP 79,716.00
750EGP 85,410.00

EGP 5,694.00

EGP 113.88 Each (In a Tube of 50) (ex VAT)

Infineon OptiMOS™ N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 IPP057N06N3GXKSA1

Stock information temporarily unavailable.

50

Available in multiples of 50
50EGP 5,694.00
100EGP 11,388.00
150EGP 17,082.00
200EGP 22,776.00
250EGP 28,470.00
300EGP 34,164.00
350EGP 39,858.00
400EGP 45,552.00
450EGP 51,246.00
500EGP 56,940.00
550EGP 62,634.00
600EGP 68,328.00
650EGP 74,022.00
700EGP 79,716.00
750EGP 85,410.00

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0057 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more