Infineon CoolMOS™ CE N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK IPD50R650CEAUMA1

RS Stock No.: 214-9041Brand: InfineonManufacturers Part No.: IPD50R650CEAUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

500 V

Series

CoolMOS™ CE

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.65 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

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EGP 1,482.75

EGP 59.31 Each (In a Pack of 25) (ex VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK IPD50R650CEAUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25EGP 1,482.75
50EGP 2,965.50
75EGP 4,448.25
100EGP 5,931.00
125EGP 7,413.75
150EGP 8,896.50
175EGP 10,379.25
200EGP 11,862.00
225EGP 13,344.75
250EGP 14,827.50
275EGP 16,310.25
300EGP 17,793.00
325EGP 19,275.75
350EGP 20,758.50
375EGP 22,241.25

EGP 1,482.75

EGP 59.31 Each (In a Pack of 25) (ex VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK IPD50R650CEAUMA1

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25EGP 1,482.75
50EGP 2,965.50
75EGP 4,448.25
100EGP 5,931.00
125EGP 7,413.75
150EGP 8,896.50
175EGP 10,379.25
200EGP 11,862.00
225EGP 13,344.75
250EGP 14,827.50
275EGP 16,310.25
300EGP 17,793.00
325EGP 19,275.75
350EGP 20,758.50
375EGP 22,241.25

Stock information temporarily unavailable.

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

500 V

Series

CoolMOS™ CE

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.65 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more