Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO 263 IPB65R110CFDAATMA1

RS Stock No.: 222-4655Brand: InfineonManufacturers Part No.: IPB65R110CFDAATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31.2 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

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EGP 268,590.00

EGP 268.59 Each (On a Reel of 1000) (ex VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO 263 IPB65R110CFDAATMA1

1000

Available in multiples of 1000
1000EGP 268,590.00
2000EGP 537,180.00
3000EGP 805,770.00
4000EGP 1,074,360.00
5000EGP 1,342,950.00
6000EGP 1,611,540.00
7000EGP 1,880,130.00
8000EGP 2,148,720.00
9000EGP 2,417,310.00
10000EGP 2,685,900.00
11000EGP 2,954,490.00
12000EGP 3,223,080.00
13000EGP 3,491,670.00
14000EGP 3,760,260.00
15000EGP 4,028,850.00

EGP 268,590.00

EGP 268.59 Each (On a Reel of 1000) (ex VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO 263 IPB65R110CFDAATMA1

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000EGP 268,590.00
2000EGP 537,180.00
3000EGP 805,770.00
4000EGP 1,074,360.00
5000EGP 1,342,950.00
6000EGP 1,611,540.00
7000EGP 1,880,130.00
8000EGP 2,148,720.00
9000EGP 2,417,310.00
10000EGP 2,685,900.00
11000EGP 2,954,490.00
12000EGP 3,223,080.00
13000EGP 3,491,670.00
14000EGP 3,760,260.00
15000EGP 4,028,850.00

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31.2 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more