N-Channel MOSFET, 180 A, 80 V, 7-Pin D2PAK Infineon IPB019N08N3 G

RS Stock No.: 898-7003PBrand: InfineonManufacturers Part No.: IPB019N08N3 G
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

80 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

155 nC @ 10 V

Width

9.45mm

Transistor Material

Si

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.57mm

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 180 A, 80 V, 7-Pin D2PAK Infineon IPB019N08N3 G
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30P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 180 A, 80 V, 7-Pin D2PAK Infineon IPB019N08N3 G

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Stock information temporarily unavailable.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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You may be interested in

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

80 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

155 nC @ 10 V

Width

9.45mm

Transistor Material

Si

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.57mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in