Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1

RS Stock No.: 262-5855Brand: InfineonManufacturers Part No.: IPB018N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

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EGP 171.12

Each (In a Pack of 5) (ex VAT)

Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5EGP 855.60
10EGP 1,711.20
15EGP 2,566.80
20EGP 3,422.40
25EGP 4,278.00
30EGP 5,133.60
35EGP 5,989.20
40EGP 6,844.80
45EGP 7,700.40
50EGP 8,556.00
55EGP 9,411.60
60EGP 10,267.20
65EGP 11,122.80
70EGP 11,978.40
75EGP 12,834.00

EGP 171.12

Each (In a Pack of 5) (ex VAT)

Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5EGP 855.60
10EGP 1,711.20
15EGP 2,566.80
20EGP 3,422.40
25EGP 4,278.00
30EGP 5,133.60
35EGP 5,989.20
40EGP 6,844.80
45EGP 7,700.40
50EGP 8,556.00
55EGP 9,411.60
60EGP 10,267.20
65EGP 11,122.80
70EGP 11,978.40
75EGP 12,834.00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more