Infineon CoolSiC Silicon N-Channel MOSFET, 20 A, 650 V, 4-Pin TO-247-4 IMZA65R107M1HXKSA1

RS Stock No.: 232-0416Brand: InfineonManufacturers Part No.: IMZA65R107M1HXKSA1
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.142 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

EGP 13,550.70

EGP 451.69 Each (In a Tube of 30) (ex VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 20 A, 650 V, 4-Pin TO-247-4 IMZA65R107M1HXKSA1

30

Available in multiples of 30
30EGP 13,550.70
60EGP 27,101.40
90EGP 40,652.10
120EGP 54,202.80
150EGP 67,753.50
180EGP 81,304.20
210EGP 94,854.90
240EGP 108,405.60
270EGP 121,956.30
300EGP 135,507.00
330EGP 149,057.70
360EGP 162,608.40
390EGP 176,159.10
420EGP 189,709.80
450EGP 203,260.50

EGP 13,550.70

EGP 451.69 Each (In a Tube of 30) (ex VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 20 A, 650 V, 4-Pin TO-247-4 IMZA65R107M1HXKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30EGP 13,550.70
60EGP 27,101.40
90EGP 40,652.10
120EGP 54,202.80
150EGP 67,753.50
180EGP 81,304.20
210EGP 94,854.90
240EGP 108,405.60
270EGP 121,956.30
300EGP 135,507.00
330EGP 149,057.70
360EGP 162,608.40
390EGP 176,159.10
420EGP 189,709.80
450EGP 203,260.50

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.142 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more