Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14

RS Stock No.: 284-864Brand: InfineonManufacturers Part No.: IMYH200R024M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO247-4-PLUS-NT14

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia

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Stock information temporarily unavailable.

EGP 9,408.36

EGP 9,408.36 Each (ex VAT)

Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 9,408.36
2EGP 18,816.72
3EGP 28,225.08
4EGP 37,633.44
5EGP 47,041.80
6EGP 56,450.16
7EGP 65,858.52
8EGP 75,266.88
9EGP 84,675.24
10EGP 94,083.60
11EGP 103,491.96
12EGP 112,900.32
13EGP 122,308.68
14EGP 131,717.04
15EGP 141,125.40

EGP 9,408.36

EGP 9,408.36 Each (ex VAT)

Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 9,408.36
2EGP 18,816.72
3EGP 28,225.08
4EGP 37,633.44
5EGP 47,041.80
6EGP 56,450.16
7EGP 65,858.52
8EGP 75,266.88
9EGP 84,675.24
10EGP 94,083.60
11EGP 103,491.96
12EGP 112,900.32
13EGP 122,308.68
14EGP 131,717.04
15EGP 141,125.40

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO247-4-PLUS-NT14

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more