Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1

RS Stock No.: 232-0389Brand: InfineonManufacturers Part No.: IMW65R048M1HXKSA1
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

EGP 16,472.70

EGP 549.09 Each (In a Tube of 30) (ex VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1

30

Available in multiples of 30
30EGP 16,472.70
60EGP 32,945.40
90EGP 49,418.10
120EGP 65,890.80
150EGP 82,363.50
180EGP 98,836.20
210EGP 115,308.90
240EGP 131,781.60
270EGP 148,254.30
300EGP 164,727.00
330EGP 181,199.70
360EGP 197,672.40
390EGP 214,145.10
420EGP 230,617.80
450EGP 247,090.50

EGP 16,472.70

EGP 549.09 Each (In a Tube of 30) (ex VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30EGP 16,472.70
60EGP 32,945.40
90EGP 49,418.10
120EGP 65,890.80
150EGP 82,363.50
180EGP 98,836.20
210EGP 115,308.90
240EGP 131,781.60
270EGP 148,254.30
300EGP 164,727.00
330EGP 181,199.70
360EGP 197,672.40
390EGP 214,145.10
420EGP 230,617.80
450EGP 247,090.50

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more