Infineon N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin HSOF-8 IAUT200N08S5N023ATMA1

RS Stock No.: 220-7366Brand: InfineonManufacturers Part No.: IAUT200N08S5N023ATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 5

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0023 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1

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Stock information temporarily unavailable.

EGP 439.56

EGP 219.78 Each (In a Pack of 2) (ex VAT)

Infineon N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin HSOF-8 IAUT200N08S5N023ATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2EGP 439.56
4EGP 879.12
6EGP 1,318.68
8EGP 1,758.24
10EGP 2,197.80
12EGP 2,637.36
14EGP 3,076.92
16EGP 3,516.48
18EGP 3,956.04
20EGP 4,395.60
22EGP 4,835.16
24EGP 5,274.72
26EGP 5,714.28
28EGP 6,153.84
30EGP 6,593.40

EGP 439.56

EGP 219.78 Each (In a Pack of 2) (ex VAT)

Infineon N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin HSOF-8 IAUT200N08S5N023ATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2EGP 439.56
4EGP 879.12
6EGP 1,318.68
8EGP 1,758.24
10EGP 2,197.80
12EGP 2,637.36
14EGP 3,076.92
16EGP 3,516.48
18EGP 3,956.04
20EGP 4,395.60
22EGP 4,835.16
24EGP 5,274.72
26EGP 5,714.28
28EGP 6,153.84
30EGP 6,593.40

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 5

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0023 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more