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Infineon Dual SiC Dual N-Channel MOSFET, 720 A, 3300 V Tray FF2600UXTR33T2M1BPSA1

RS Stock No.: 277-195Brand: InfineonManufacturers Part No.: FF2600UXTR33T2M1BPSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

Dual N

Maximum Continuous Drain Current

720 A

Maximum Drain Source Voltage

3300 V

Package Type

Tray

Series

XHP

Mounting Type

Screw Mount

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

Country of Origin

Germany

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Stock information temporarily unavailable.

EGP 535,810.64

EGP 535,810.64 Each (ex VAT)

Infineon Dual SiC Dual N-Channel MOSFET, 720 A, 3300 V Tray FF2600UXTR33T2M1BPSA1

1

Available in multiples of 1
1EGP 535,810.64
2EGP 1,071,621.28
3EGP 1,607,431.92
4EGP 2,143,242.56
5EGP 2,679,053.20
6EGP 3,214,863.84
7EGP 3,750,674.48
8EGP 4,286,485.12
9EGP 4,822,295.76
10EGP 5,358,106.40
11EGP 5,893,917.04
12EGP 6,429,727.68
13EGP 6,965,538.32
14EGP 7,501,348.96
15EGP 8,037,159.60

EGP 535,810.64

EGP 535,810.64 Each (ex VAT)

Infineon Dual SiC Dual N-Channel MOSFET, 720 A, 3300 V Tray FF2600UXTR33T2M1BPSA1
Stock information temporarily unavailable.

1

Available in multiples of 1
1EGP 535,810.64
2EGP 1,071,621.28
3EGP 1,607,431.92
4EGP 2,143,242.56
5EGP 2,679,053.20
6EGP 3,214,863.84
7EGP 3,750,674.48
8EGP 4,286,485.12
9EGP 4,822,295.76
10EGP 5,358,106.40
11EGP 5,893,917.04
12EGP 6,429,727.68
13EGP 6,965,538.32
14EGP 7,501,348.96
15EGP 8,037,159.60

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

Dual N

Maximum Continuous Drain Current

720 A

Maximum Drain Source Voltage

3300 V

Package Type

Tray

Series

XHP

Mounting Type

Screw Mount

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

Country of Origin

Germany

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more