Infineon P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 BSS223PWH6327XTSA1

RS Stock No.: 826-9991Brand: InfineonManufacturers Part No.: BSS223PWH6327XTSA1Distrelec Article No.: 30283915
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

20 V

Series

OptiMOS P

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.33V

Automotive Standard

AEC-Q101

Product details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

EGP 4,050.00

EGP 8.10 Each (On a Reel of 500) (ex VAT)

Infineon P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 BSS223PWH6327XTSA1

500

Available in multiples of 500
500EGP 4,050.00
1000EGP 8,100.00
1500EGP 12,150.00
2000EGP 16,200.00
2500EGP 20,250.00
3000EGP 24,300.00
3500EGP 28,350.00
4000EGP 32,400.00
4500EGP 36,450.00
5000EGP 40,500.00
5500EGP 44,550.00
6000EGP 48,600.00
6500EGP 52,650.00
7000EGP 56,700.00
7500EGP 60,750.00

EGP 4,050.00

EGP 8.10 Each (On a Reel of 500) (ex VAT)

Infineon P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 BSS223PWH6327XTSA1
Stock information temporarily unavailable.

500

Available in multiples of 500
500EGP 4,050.00
1000EGP 8,100.00
1500EGP 12,150.00
2000EGP 16,200.00
2500EGP 20,250.00
3000EGP 24,300.00
3500EGP 28,350.00
4000EGP 32,400.00
4500EGP 36,450.00
5000EGP 40,500.00
5500EGP 44,550.00
6000EGP 48,600.00
6500EGP 52,650.00
7000EGP 56,700.00
7500EGP 60,750.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

20 V

Series

OptiMOS P

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.33V

Automotive Standard

AEC-Q101

Product details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more