Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
300 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.185 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
Si
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EGP 395.95
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EGP 395.95
Each (In a Tube of 50) (ex VAT)
50
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
300 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.185 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
Si