Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 270 A, 40 V, 3-Pin D2PAK AUIRF2804STRL

RS Stock No.: 220-7343Brand: InfineonManufacturers Part No.: AUIRF2804STRL
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

270 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.002 o

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

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Stock information temporarily unavailable.

EGP 470.02

EGP 235.01 Each (In a Pack of 2) (ex VAT)

Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 270 A, 40 V, 3-Pin D2PAK AUIRF2804STRL
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2EGP 470.02
4EGP 940.04
6EGP 1,410.06
8EGP 1,880.08
10EGP 2,350.10
12EGP 2,820.12
14EGP 3,290.14
16EGP 3,760.16
18EGP 4,230.18
20EGP 4,700.20
22EGP 5,170.22
24EGP 5,640.24
26EGP 6,110.26
28EGP 6,580.28
30EGP 7,050.30

EGP 470.02

EGP 235.01 Each (In a Pack of 2) (ex VAT)

Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 270 A, 40 V, 3-Pin D2PAK AUIRF2804STRL
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2EGP 470.02
4EGP 940.04
6EGP 1,410.06
8EGP 1,880.08
10EGP 2,350.10
12EGP 2,820.12
14EGP 3,290.14
16EGP 3,760.16
18EGP 4,230.18
20EGP 4,700.20
22EGP 5,170.22
24EGP 5,640.24
26EGP 6,110.26
28EGP 6,580.28
30EGP 7,050.30

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

270 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.002 o

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more