Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
EGP 840.66
EGP 840.66 Each (ex VAT)
Infineon AIM SiC N-Channel MOSFET, 22 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R120M1TXKSA1
1
EGP 840.66
EGP 840.66 Each (ex VAT)
Infineon AIM SiC N-Channel MOSFET, 22 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R120M1TXKSA1
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China


