Infineon AIM SiC N-Channel MOSFET, 38 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R060M1TXKSA1

RS Stock No.: 349-377Brand: InfineonManufacturers Part No.: AIMZH120R060M1TXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

1200 V

Series

AIM

Package Type

PG-TO247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

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EGP 1,210.27

EGP 1,210.27 Each (ex VAT)

Infineon AIM SiC N-Channel MOSFET, 38 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R060M1TXKSA1

1

Available in multiples of 1
1EGP 1,210.27
2EGP 2,420.54
3EGP 3,630.81
4EGP 4,841.08
5EGP 6,051.35
6EGP 7,261.62
7EGP 8,471.89
8EGP 9,682.16
9EGP 10,892.43
10EGP 12,102.70
11EGP 13,312.97
12EGP 14,523.24
13EGP 15,733.51
14EGP 16,943.78
15EGP 18,154.05

EGP 1,210.27

EGP 1,210.27 Each (ex VAT)

Infineon AIM SiC N-Channel MOSFET, 38 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R060M1TXKSA1

Stock information temporarily unavailable.

1

Available in multiples of 1
1EGP 1,210.27
2EGP 2,420.54
3EGP 3,630.81
4EGP 4,841.08
5EGP 6,051.35
6EGP 7,261.62
7EGP 8,471.89
8EGP 9,682.16
9EGP 10,892.43
10EGP 12,102.70
11EGP 13,312.97
12EGP 14,523.24
13EGP 15,733.51
14EGP 16,943.78
15EGP 18,154.05

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

1200 V

Series

AIM

Package Type

PG-TO247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more