Fuji Electric Super J-MOS N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247 FMW30N60S1HF
Technical Document
Specifications
Brand
Fuji ElectricChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
600 V
Series
Super J-MOS
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
220 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.03mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.9mm
Typical Gate Charge @ Vgs
73 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
Japan
Product details
N-Channel Power MOSFET, Super J MOS, Fuji Electric
N-Channel enhancement mode power MOSFETs
- Low on-resistance
- Low noise
- Low switching loss
MOSFET Transistors, Fuji Electric
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P.O.A.
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Technical Document
Specifications
Brand
Fuji ElectricChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
600 V
Series
Super J-MOS
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
220 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.03mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.9mm
Typical Gate Charge @ Vgs
73 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
Japan
Product details
N-Channel Power MOSFET, Super J MOS, Fuji Electric
N-Channel enhancement mode power MOSFETs
- Low on-resistance
- Low noise
- Low switching loss
MOSFET Transistors, Fuji Electric
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products