Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
450 mA
Maximum Drain Source Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Maximum Operating Temperature
+150 °C
Height
4.95mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
EGP 362.05
EGP 72.41 Each (In a Pack of 5) (ex VAT)
Standard
5
EGP 362.05
EGP 72.41 Each (In a Pack of 5) (ex VAT)
Standard
5
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
450 mA
Maximum Drain Source Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Maximum Operating Temperature
+150 °C
Height
4.95mm
Minimum Operating Temperature
-55 °C
Product details