Diodes Inc Dual N-Channel MOSFET, 2 A, 20 V, 6-Pin SOT-26 DMN2215UDM-7
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
650 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.3mm
Country of Origin
China
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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EGP 434.50
EGP 17.38 Each (Supplied as a Tape) (ex VAT)
Standard
25
EGP 434.50
EGP 17.38 Each (Supplied as a Tape) (ex VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
650 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.3mm
Country of Origin
China
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products