Technical Documents
Specifications
Brand
BroadcomProduct Type
Optocoupler
Mount Type
Surface
Maximum Forward Voltage
1.55V
Number of Channels
1
Packaging
Tape & Reel
Number of Pins
12
Package Type
SO-12
Input Current Type
DC
Typical Rise Time
7μs
Maximum Input Current
230mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Typical Fall Time
7μs
Standards/Approvals
RoHS
Series
ACFL-3161
Automotive Standard
No
Country of Origin
Philippines
Product Details
The Broadcom ACFL-3161 driver is a 10A peak, rail-to-rail output gate drive optocoupler. It comes in a compact, surface-mountable SO-12 package for spacesavings. The ACFL-3161 is primarily designed with high peak driving current capability to ensure optimum performance for direct driving SiC MOSFET or IGBT in various applications. The ACFL-3161 features fast propagation delay and tight dead time distortion, which make it ideal for driving SiC MOSFET and IGBTs at high frequency.
Stock information temporarily unavailable.
P.O.A.
Each (In a Pack of 2) (ex VAT)
Standard
2
P.O.A.
Each (In a Pack of 2) (ex VAT)
Stock information temporarily unavailable.
Standard
2
Technical Documents
Specifications
Brand
BroadcomProduct Type
Optocoupler
Mount Type
Surface
Maximum Forward Voltage
1.55V
Number of Channels
1
Packaging
Tape & Reel
Number of Pins
12
Package Type
SO-12
Input Current Type
DC
Typical Rise Time
7μs
Maximum Input Current
230mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Typical Fall Time
7μs
Standards/Approvals
RoHS
Series
ACFL-3161
Automotive Standard
No
Country of Origin
Philippines
Product Details
The Broadcom ACFL-3161 driver is a 10A peak, rail-to-rail output gate drive optocoupler. It comes in a compact, surface-mountable SO-12 package for spacesavings. The ACFL-3161 is primarily designed with high peak driving current capability to ensure optimum performance for direct driving SiC MOSFET or IGBT in various applications. The ACFL-3161 features fast propagation delay and tight dead time distortion, which make it ideal for driving SiC MOSFET and IGBTs at high frequency.