Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

RS Stock No.: 253-3509PBrand: BournsManufacturers Part No.: BIDW50N65T
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Technical Document

Specifications

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

416 W

Number of Transistors

1

Package Type

TO-247

Configuration

Single Diode

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Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
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P.O.A.

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
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Technical Document

Specifications

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

416 W

Number of Transistors

1

Package Type

TO-247

Configuration

Single Diode