Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1

RS Stock No.: 130-0897Brand: InfineonManufacturers Part No.: IPD50R380CEAUMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

14.1 A

Maximum Drain Source Voltage

550 V

Package Type

DPAK (TO-252)

Series

CoolMOS™ CE

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

98 W

Maximum Gate Source Voltage

-30 V, +30 V

Length

6.73mm

Typical Gate Charge @ Vgs

24.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.22mm

Number of Elements per Chip

1

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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EGP 733.60

EGP 73.36 Each (In a Pack of 10) (ex VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1
Select packaging type

EGP 733.60

EGP 73.36 Each (In a Pack of 10) (ex VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

14.1 A

Maximum Drain Source Voltage

550 V

Package Type

DPAK (TO-252)

Series

CoolMOS™ CE

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

98 W

Maximum Gate Source Voltage

-30 V, +30 V

Length

6.73mm

Typical Gate Charge @ Vgs

24.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.22mm

Number of Elements per Chip

1

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more