Wolfspeed SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 C3M0075120D

RS Stock No.: 192-3523Brand: WolfspeedManufacturers Part No.: C3M0075120D
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Technical Document

Specifications

Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Number of Elements per Chip

1

Width

5.21mm

Length

16.13mm

Typical Gate Charge @ Vgs

54 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

21.1mm

Country of Origin

China

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Stock information temporarily unavailable.

EGP 1,636.51

EGP 1,636.51 Each (ex VAT)

Wolfspeed SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 C3M0075120D

1

Available in multiples of 1
1EGP 1,636.51
2EGP 3,273.02
3EGP 4,909.53
4EGP 6,546.04
5EGP 8,182.55
6EGP 9,819.06
7EGP 11,455.57
8EGP 13,092.08
9EGP 14,728.59
10EGP 16,365.10
11EGP 18,001.61
12EGP 19,638.12
13EGP 21,274.63
14EGP 22,911.14
15EGP 24,547.65

EGP 1,636.51

EGP 1,636.51 Each (ex VAT)

Wolfspeed SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 C3M0075120D
Stock information temporarily unavailable.

1

Available in multiples of 1
1EGP 1,636.51
2EGP 3,273.02
3EGP 4,909.53
4EGP 6,546.04
5EGP 8,182.55
6EGP 9,819.06
7EGP 11,455.57
8EGP 13,092.08
9EGP 14,728.59
10EGP 16,365.10
11EGP 18,001.61
12EGP 19,638.12
13EGP 21,274.63
14EGP 22,911.14
15EGP 24,547.65

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Number of Elements per Chip

1

Width

5.21mm

Length

16.13mm

Typical Gate Charge @ Vgs

54 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

21.1mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more