N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3

RS Stock No.: 178-3698Brand: Vishay SiliconixManufacturers Part No.: SiSS02DN-T1-GE3
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

EGP 165,780.00

EGP 55.26 Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3

3000

Available in multiples of 3000
3000EGP 165,780.00
6000EGP 331,560.00
9000EGP 497,340.00
12000EGP 663,120.00
15000EGP 828,900.00
18000EGP 994,680.00
21000EGP 1,160,460.00
24000EGP 1,326,240.00
27000EGP 1,492,020.00
30000EGP 1,657,800.00
33000EGP 1,823,580.00
36000EGP 1,989,360.00
39000EGP 2,155,140.00
42000EGP 2,320,920.00
45000EGP 2,486,700.00

EGP 165,780.00

EGP 55.26 Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000EGP 165,780.00
6000EGP 331,560.00
9000EGP 497,340.00
12000EGP 663,120.00
15000EGP 828,900.00
18000EGP 994,680.00
21000EGP 1,160,460.00
24000EGP 1,326,240.00
27000EGP 1,492,020.00
30000EGP 1,657,800.00
33000EGP 1,823,580.00
36000EGP 1,989,360.00
39000EGP 2,155,140.00
42000EGP 2,320,920.00
45000EGP 2,486,700.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more