Technical Document
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
25 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.1 x 4.1 x 4.7mm
Maximum Operating Temperature
+150 °C
Country of Origin
Taiwan, Province Of China
Product details
General Purpose NPN Transistors, Taiwan Semiconductor
Bipolar Transistors, Taiwan Semiconductor
Stock information temporarily unavailable.
Please check again later.
EGP 6.87
Each (Supplied as a Tape) (ex VAT)
4000
EGP 6.87
Each (Supplied as a Tape) (ex VAT)
4000
Technical Document
Specifications
Brand
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
25 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.1 x 4.1 x 4.7mm
Maximum Operating Temperature
+150 °C
Country of Origin
Taiwan, Province Of China
Product details