Semikron SKM150GAR12T4 Single IGBT Module, 232 A 1200 V, 5-Pin SEMITRANS2, Panel Mount
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
232 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS2
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
94 x 34 x 30.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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EGP 8,776.98
Each (ex VAT)
1
EGP 8,776.98
Each (ex VAT)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
232 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS2
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
94 x 34 x 30.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products