Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
4.5 V
Maximum Operating Frequency
20 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Product details
Low Noise Bipolar Transistors, ON Semiconductor
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P.O.A.
100
P.O.A.
100
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
4.5 V
Maximum Operating Frequency
20 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Product details