Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
150 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Collector Base Voltage
150 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.28 x 10.28 x 4.82mm
Maximum Operating Temperature
+150 °C
Country of Origin
Czech Republic
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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EGP 101.90
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50
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
150 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Collector Base Voltage
150 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.28 x 10.28 x 4.82mm
Maximum Operating Temperature
+150 °C
Country of Origin
Czech Republic
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.