onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
454 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Transistor Configuration
Single
Dimensions
15.8 x 5.2 x 22.74mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
5000pF
Maximum Operating Temperature
+175 °C
Country of Origin
China
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EGP 571.63
Each (In a Tube of 30) (ex VAT)
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EGP 571.63
Each (In a Tube of 30) (ex VAT)
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Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
454 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Transistor Configuration
Single
Dimensions
15.8 x 5.2 x 22.74mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
5000pF
Maximum Operating Temperature
+175 °C
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products